Scattering Parameter Based Modeling And Simulation Of Symmetric Tied-Gate Inalas/Ingaas DG-HEMT For Millimeter-Wave Applications

摘要

This paper analyses the RF performance of the symmetric tied-gate lno52Alo.48As/lno53Ga047As DG-HEMT in terms of its maximum frequency of oscillation (lJX) and the other important figures of merit that include Maximum Unilateral Transducer Power Gain and the Maximum Stable Gain. This comprehensive investigation has been done on the basis of scattering parameters in order to judge the potential of InAlAs/InGaAs DG-HEMT as the device for future millimeter wave frequency applications. The effect of parasitic elements has also been included in the analytical model which leads to better correspondence with the experimental results. The analytical results thus obtained using the charge control model are compared and found to agree well with both the ATLAS-3D device simulation results as well as the experimental results.