机译:掺氨非晶铟镓锌氧化薄膜晶体管的器件特性
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC,Centerfor Nanoscience ε Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan. ROC;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC;
indium gallium zinc oxide (iczo); thin film transistors (tfts); ammonia (nh_3);
机译:基于非晶铟 - 镓 - 氧化锌薄膜晶体管的1T-1R非易失性存储器件的多级细胞特性研究
机译:Ar等离子处理改善非晶铟镓锌氧化物薄膜晶体管的器件特性
机译:直流溅射功率对负偏压照明应力下非晶铟镓锌氧化物薄膜晶体管行为的影响:实验分析与器件仿真相结合
机译:无定形铟镓锌(A-IGZO)薄膜晶体管界面和散装效应的装置性能和可靠性表征
机译:氧化锌发光二极管,氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
机译:非晶铟 - 镓 - 氧化锌膜质量与薄膜晶体管性能的相关性研究
机译:沟道形状对无定形铟 - 镓 - 氧化锌薄膜晶体管的装置不稳定性