首页> 外文期刊>Solid-State Electronics >On the electrical degradation and green band formation in oc- and (3-phase poly(9,9-dioctyfluorene) polymer light-emitting diodes
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On the electrical degradation and green band formation in oc- and (3-phase poly(9,9-dioctyfluorene) polymer light-emitting diodes

机译:关于oc和(三相聚(9,9-二辛基芴)聚合物发光二极管)的电降解和绿带形成

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摘要

In this work we report a detailed comparison of optical and electrical degradation between ex- and p-phase poly(9,9-dioctyftuorene) (PFO) based diodes. Analysis of the EL spectra along continuous operation time in ex- and p-PFO based diodes reveals that the unwanted green emission traditionally associated to fluorenone is more likely to occur in cx-phase PFO. The relative spectral areas arising from excitonic and vibronic transitions as well as fluorenone defects have been quantified by means of Gaussian deconvolu-tion along the operation time. The relative spectral area associated to the formation of the fluorenone increases 13% for the p-PFO diode and up to 21% for the α-PFO diode only after 35 min of continuous operation. Analysis of the/-V curve before and after electrical stressing has lead to hole mobilities in pristine diodes of 1.4×10~(-4)cm~2/Vsand 1.6 x 10~(-5) cm~2/Vs for p-PFO and a-PFO respectively. Both p-PFO and ot-PFO degraded samples show a reduction in the hole mobility, as well as an increase in the width of the Caussian density of states.
机译:在这项工作中,我们报告了基于前相和基于p(9,9-dioctyftuorene)(PFO)的二极管的光电降解的详细比较。在基于ex-和p-PFO的二极管中沿连续工作时间进行的EL光谱分析表明,传统上与​​芴酮相关的有害绿色发射更有可能在cx相PFO中发生。由激子和振动子跃迁以及芴酮缺陷引起的相对光谱区域已通过高斯去卷积沿工作时间进行了量化。仅在连续运行35分钟后,与芴酮形成相关的相对光谱面积对于p-PFO二极管增加了13%,对于α-PFO二极管增加了21%。电应力前后的/ -V曲线分析导致原始二极管的空穴迁移率为1.4×10〜(-4)cm〜2 / Vs,p-为1.6 x 10〜(-5)cm〜2 / Vs。 PFO和a-PFO。 p-PFO和ot-PFO降解样品均显示出空穴迁移率降低,以及高斯状态密度的宽度增加。

著录项

  • 来源
    《Solid-State Electronics》 |2011年第1期|p.46-52|共7页
  • 作者单位

    Dpto. Tecnologia Electronica, Universidad Key Juan Carlos, C/Tulipan s, 28933. Mostoles, Madrid, Spain;

    Dpto. Tecnologia Electronica, Universidad Key Juan Carlos, C/Tulipan s, 28933. Mostoles, Madrid, Spain;

    Dpto. Tecnologia Electronica, Universidad Key Juan Carlos, C/Tulipan s, 28933. Mostoles, Madrid, Spain;

    Dpto. Tecnologia Electronica, Universidad Key Juan Carlos, C/Tulipan s, 28933. Mostoles, Madrid, Spain;

    Dpto. Tecnologia Electronica, Universidad Key Juan Carlos, C/Tulipan s, 28933. Mostoles, Madrid, Spain;

    Dpto. Tecnologia Fotdnica, Universidad Politecnica de Madrid, Ciudad Universitaria s, 28040 Madrid, Spain;

    Dpto. Tecnologia Fotdnica, Universidad Politecnica de Madrid, Ciudad Universitaria s, 28040 Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    polymer light-emitting diodes; polyfluorene; p-phase; degradation;

    机译:聚合物发光二极管聚芴p相降解;

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