Analytic expression for the Fowler-Nordheim V-I characteristic including the series resistance effect

摘要

It is shown in this communication that the Fowler-Nordheim (FN) tunneling expression for the current-voltage (l-V) characteristic can be analytically inverted so that an exact expression for the voltage-current [V-l) characteristic can be obtained. The solution of the resulting implicit equation is found using the Lambert W function, i.e. the solution of the transcendental equation wew = x. The reported expressions are supported by experimental l-V curves measured in thin (≈5 nm) SiO_2 films in MOS capacitors. The analysis includes the case of a tunneling oxide with a large series resistance. For practical purposes, a closed-form expression for W based on a Pade-type approximation is also provided.