机译:快速热退火对并五苯型薄膜晶体管的影响
Department of Aviation ε Communication Electronics, Air Force Institute of Technology, Kaohsiung, Taiwan;
Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan;
Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan, Taiwan;
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan;
Department of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin, Taiwan;
Department of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin, Taiwan;
thin-film; annealing; x-ray diffraction technique; electrical properties;
机译:镍热诱导565℃快速热退火与常规炉退火制备的薄膜晶体管的比较
机译:热退火对ZnO薄膜晶体管特性的影响及准分子激光退火在塑料基ZnO薄膜晶体管中的应用
机译:并五苯薄膜晶体管栅绝缘子的聚(4-乙烯基苯酚)交联过程的快速低功率微波感应加热方案研究
机译:利用交变磁场增强快速热退火的热载流子应力下栅多晶硅薄膜晶体管的特性
机译:基于铜-铟-镓-二硒化物的薄膜太阳能电池的脉冲激光退火和快速热退火。
机译:并五苯薄膜晶体管栅绝缘子的聚(4-乙烯基苯酚)交联过程的快速低功率微波感应加热方案研究
机译:用于并五苯薄膜晶体管栅极绝缘子的聚(4-乙烯基苯酚)交联过程的快速低功耗微波感应加热方案研究
机译:具有sIpOs(半绝缘多晶硅)异质结发射极和离子注入快速热退火基区的高频硅双极晶体管