机译:用于应变Ge CMOS的Ge_(1_x)Sn_x应力源
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan,Japan Society for the Promotion of Science, Japan;
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium, ESAT-INSYS, Katholieke Universiteit Leuven, 3001 Leuven, Belgium for Scientific Research - Flanders (FWO), 100 Brussels, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Instituut voor Kern-en Stralingsfysica, KU Leuven, Leuven, Belgium;
Instituut voor Kern-en Stralingsfysica, KU Leuven, Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan;
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
机译:Ni / Ge_(1_x)Sn_x / Ge体系中固相反应形成Ni(Ge_(1_x)Sn_x)层
机译:应变Ge晶体管的源/漏应力源Sb掺杂Ge_(1-x)Sn_x外延层的生长和电性能
机译:水中脉冲激光退火制备的重掺杂多晶Ge_(1_x)Sn_x层中的掺杂行为
机译:CMOS器件高迁移率拉伸应变Ge通道的Ge_(1-x)Sn_x层的生长和特性
机译:为CMOS建模依赖于布局的应力效应。
机译:用于可植入微传感器的可扩展和低应力后CMOS处理技术
机译:第一性原理在Si / Si_(1_x)Ge_(x)异质结构和Si_(1-x)Ge_(x)合金中与电子有关的热电特性
机译:第三代可寻址CmOs211压阻式应力传感测试芯片的设计与实验评估