Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

摘要

We comprehensively investigate Al-induced crystallization (AIC) of Si to achieve (00 1) and (1 1 l)-ori-ented Si films on quartz substrates. These phenomena are systematically explained by 'preferential inter-facial-nudeation model' considering the nucleation sites and the phase transition of the interfactal Al oxide layers. Moreover, we demonstrate the lateral liquid phase epitaxy of Ge by using the orientation-controlled AlC-Si films as crystal seed. This technique enables high quality hetero-epitaxy of SiGe and Ge on transparent insulating substrates. 【Keywords】Al-induced crystallization;Orientation control;Liquid phase epitaxy;Si;Ge;