Capacitor-less A-RAM SOI memory: Principles, scaling and expected performance

摘要

Based on numerical TCAD simulations, the novel capacitor-less A-RAM memory cell is detailed in terms of electrostatic effects, transient operation and retention time. The particular double-body device architecture on SOI is beneficial for better scalability than conventional lT-DRAMs. Its dual body partitioning suppresses the supercoupling effect in SOI; the two types of carriers can coexist inside ultrathin fully depleted transistors. Electrons and holes are accommodated in different bodies, separated by an insulator layer, but remain electrostatically coupled. A-RAM features easy discrimination of'0' and '1' states, simple control waveforms and very promising performance.