Investigation of charge-trap memories with A1N based band engineered storage layers

摘要

This paper presents the investigation of the electrical properties of charge-trap memories with A1N based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si_3N_4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si_3N_4 double layer, which shows reduced program/erase voltages, combined with 10~6 excellent endurance and good retention (△V_T > 5 V after 10 years at 125 ℃).