n~+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal

摘要

The feasibility of using CuMg alloy as back contact metal for n~+-doped-layer free a-Si:H thin film solar cell (TFSC) has been investigated in this work. The ohmic-contact characteristic has been achieved by using the CuMg alloy as back contact metal. The proposed structure showed the typical solar cell current-voltage (Ⅰ-Ⅴ) characteristic. An initial efficiency of 43% has been obtained with a open-circuit voltage V_(OC) = 0.79 V, short-circuit current J_(SC) = 13.4 mA/cm~2 and fill factor F.F. = 0.40. Furthermore, the experimental results also showed the CuMg alloy was suitable for the replacement of n~+-doped-layer with the production cost reduction of a-Si:H TSFC.