机译:在Si衬底上制造的1000 V / 30 mA以上工作的GaN-on-Si MOSFET
Advanced Power Device Research Association, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
The Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;
Advanced Power Device Research Association, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Advanced Power Device Research Association, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Advanced Power Device Research Association, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
Advanced Power Device Research Association, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan;
gan-on-si; mosfets; power devices; resurf; ion implantation;
机译:氮化铝硅衬底上制造的小型MOSFET自热效应的数值研究
机译:氮化铝硅衬底上制造的小型MOSFET自热效应的数值研究
机译:在化学机械抛光的SiGe衬底上制造的应变Si MOSFET的性能增强
机译:电子全息表征浅植物的慢速结,由扩散工艺制造Forsub-30nm栅极长度MOSFET
机译:对具有薄界面钝化层的III-V衬底上基于二氧化ha的MOSCAP和MOSFET的研究
机译:使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中:对性能和可靠性的影响
机译:使用0.25μmCmOs工艺在siGe虚拟基板上制造压缩应变的埋入沟道$ si_ {0.7} $ Ge $ _ {0.3} $ p-mOsFET