机译:注入角外围对AlGaN / GaN高电子迁移率晶体管的非合金化Si注入欧姆接触的影响
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA 6009, Australia;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA;
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA 6009, Australia;
Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Hwy, Crawley, WA 6009, Australia;
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA 6009, Australia;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA;
School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy, Crawley, WA 6009, Australia;
aluminum compounds; gallium compounds; ion implantation; high electron mobility transistors; ohmic contacts; contact resistance; sims;
机译:高电子迁移率晶体管的Si注入AlGaN / GaN异质结构的非合金欧姆接触的特性
机译:高电子迁移率晶体管的硅注入AlGaN / GaN异质结构的非合金欧姆接触的特性
机译:具有非合金再生长欧姆接触的Si上的超低泄漏AlGaN / GaN高电子迁移率晶体管
机译:取决于AlGaN / GaN高电子迁移率晶体管结构的AlGaN层厚度的欧姆接触特性
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
机译:ALGAN / GAN高电子迁移率晶体管的无芳型嵌入式欧姆触点:蚀刻化学和金属方案的研究
机译:si,GaN和alGaN / GaN高电子迁移率晶体管(HEmT)晶片的非接触迁移率,载流子密度和薄层电阻测量。