Microwave noise modeling of FinFETs

摘要

The noise characteristics of advanced silicon semiconductor devices fabricated with FinFET technology are investigated and modeled at the probe tip reference planes in the microwave frequency range. The transistor noise model is obtained by assigning an equivalent temperature to each resistor of the small signal equivalent circuit. These temperatures are selected to be equal to the room temperature with the exception of the temperature values of the intrinsic output, feedback, and substrate resistances, which are selected in order to reproduce accurately the 50 Ω noise factor measurements over a broadband frequency range going from 0.5 GHz up to 26.5 GHz. Accurate model simulations are obtained at such high frequencies, thanks to the inclusion of the noise temperature associated to the feedback and substrate resistances representing non-quasi-static effects which cannot be neglected in the investigated frequency range.