High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

摘要

The paper reports a normally-off n-channel AlGaN/GaN hybrid metal-oxide-semiconductor heterojunc-tion field-effect transistor (MOS-HFET) on Si substrate with high field-effect mobility. To decrease the channel resistance and to improve the field-effect mobility, of the MOS-HFET, a selective area growth (SAG) technique is applied at the channel region. The fabricated MOS-HFET exhibits a good normally-off operation with the threshold voltage of 3.7 V, the specific ON-state resistance of 7.6 mil cm2, and the breakdown voltage of over 800 V.