机译:非对称双栅极MOSFET的基于表面电势的漏极电流模型
School of Technology, Electronics and Tele-Communication Engineering, KI1T University, Bhubaneswar, Orissa 751 024, India;
Department of Electronics and Communication Engineering, Jadavpur University, Kolkata 700 032, India;
SKP Engineering College, Thiruvannamalai 606 611, Tamil Nadu, India;
Department of Electronics and Communication Engineering, Jadavpur University, Kolkata 700 032, India;
asymmetric double gate mosfet; poisson's equation; pao-sah's double integral; short-channel effects;
机译:长表面无结双栅极MOSFET的基于表面电势的漏极电流模型
机译:单栅MOSFET,未掺杂对称和非对称双栅SOI MOSFET的漏电流模型和量子力学效应:综述
机译:单栅MOSFET,未掺杂对称和非对称双栅SOI MOSFET的漏电流模型和量子力学效应:综述
机译:短通道对称双栅MOSFET的分析电位速度饱和漏极电流,电荷和电容模型
机译:对绝缘体上硅CMOS器件和电路(包括双栅MOSFET)的基于过程的紧凑建模和分析。
机译:具有InAs / Si异质结和源极口袋结构的双栅隧道FET的漏极电流模型
机译:纳米级双栅极MOSFET中的静电和漏极电流建模