机译:玻璃上栅极偏置非易失性存储器的新型制造工艺以及栅极偏置结构对器件特性的影响
School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
rnDepartment of Physics, Madras Christian College, Chennai, India;
rnSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
rnSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
rnSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
rnSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
rnSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
NVM/TFT; offset gate structure;
机译:Ba(Zr0.1Ti0.9)O3门控氧化膜制备非易失性TFT铁电RAM器件的单晶体管电容器结构
机译:溶液-铟锌-硅-氧化硅有源沟道和有机铁电栅绝缘体组成的混合栅叠层薄膜晶体管的非易失性存储特性
机译:使用具有细粒度电源门控方案的垂直磁隧道结器件设计和制作一晶体管/一电阻非易失性二进制内容可寻址存储器
机译:使用基于p-MTJ的内存中逻辑结构制造3000-6输入LUT嵌入式和块级功率门控非易失性FPGA芯片
机译:设计用于非易失性闪存设备的纳米晶体浮栅。
机译:非易失性存储应用中Al2O3-TiAlO-SiO2栅堆叠的电子结构和电荷俘获特性
机译:GE MOS结构的高性能门堆制造工艺未来电子设备