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机译:具有由低温富氮SiN / SiO_2叠层形成的隧穿层的电荷俘获闪存器件的提高的编程/擦除速度
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;
flash memory; charge-trapping; nitrogen-rich; silicon nitride;
机译:SiO_2隧穿和Si_3N_4 / HfO_2俘获层是通过低温工艺在全栅无结电荷俘获闪存器件上形成的
机译:具有Ge通道的电荷陷阱闪存设备的增强的编程和擦除速度
机译:具有SiGe埋入通道的P沟道电荷陷阱闪存设备的增强的编程和擦除速度
机译:具有低温富氮SiN / SiO
机译:闪存可擦可编程只读存储设备中的热载流子效应。
机译:低于200°C的低温溶液处理的可调闪存设备无隧道层和阻挡层
机译:SiN对Fowler-Nordheim隧穿程序/擦除操作下电荷陷阱闪烁(CTF)性能和可靠性的影响
机译:摩托罗拉mC68040采用altera Epm5000可擦写可编程逻辑器件进行高速设计