Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region

摘要

This paper analyses the experimental results of voltage capability (V_(BR) > 120 V) and output characteristics of a new lateral power P-channel MOS transistors manufactured on a 0.18 μm SOI CMOS technology by means of TCAD numerical simulations. The proposed LDPMOS structures have an N-type buried layer (NBL) inserted in the P-well drift region with the purpose of increasing the RESURF effectiveness and improving the static characteristics (R_(on-sp)/V_(BR) trade-off) and the device switching performance. Some architecture modifications are also proposed in this paper to further improve the performance of fabricated transistors.