A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors

摘要

This work proposes a physically-based definition for the threshold voltage, V_(TH), of junctionless nanowire transistors and a methodology to extract it. The V_(TH) is defined as the point of equal magnitude for the drift and diffusion components of the drain current. The methodology for V_(TH) extraction uses the device trans-conductance over drain current ratio characteristics. An analytical model for the threshold voltage based on the same definition has also been developed. Both V_(TH) extraction method and model have been validated through 3D simulations and have been applied to experimental devices. The proposed method has shown to provide a correct dependence on the temperature, while the double derivative of the drain current method overestimates this variation.