The enhancement of unipolar resistive switching behavior via an amorphous TiO_x layer formation in Dy_2O_3-based forming-free RRAM

摘要

We present effects of an amorphous TiO_x layer formation on the behavior of a unipolar resistive switching memory device, which consists of Pt/Ti embedding layer (Ti-EL)/Dy_2O_3/Pt structure. The better properties have been obtained from the Pt/Ti-EL/Dy_2O_3/Pt system, including lower switching voltage, higher switching uniformity, and better endurance, besides, a reversed set/reset process is observed, in comparison with Pt/Dy_2O_3/Pt device. It is considered that the spontaneous formation of an amorphous TiO_x layer and Ti-Pt-O nano-crystal clusters from Ti layer between Pt top electrode and Dy_2O_3 film is the main factor for the improvement of unipolar resistive switching behavior.