...
机译:具有直接接触La-Slate / Si界面结构的(100)和(110)表面取向nMOSFET的电特性比较研究
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;
High-k gate dielectrics; Rare earth oxides; Silicate; Interface property; Surface orientation;
机译:直接接触La-Slate / Si结构纳米复合材料中电子迁移率表征的实验研究
机译:高k与硅直接接触的硅酸镧的界面和电性能
机译:(110)表面取向Si衬底上超薄栅氧化物CMOS的电学特性
机译:(100)和(110)方向的nMOSFET,在La-Slate / Si界面中具有高度缩放的EOT,适用于多栅极架构
机译:金红石型二氧化钛(110)-水界面的双电层结构的原子尺度X射线研究。
机译:氟化HfO2 / SiON栅堆叠的单轴应变nMOSFET的电学特性
机译:Ag-MgO(100)和(110)界面的比较理论研究
机译:界面结构对ptsi-si肖特基势垒接触电性能的影响。