Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

摘要

In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design. The starting point of the model is the Landauer expression of the current for ID physical systems, augmented with suitable expressions of the tunneling probability across the tunnel junctions and the whole channel. So doing, we account for the ambipolar effect, as well as for the tunnel-related leakage current, which becomes appreciable when small band-gap materials are used. The model is validated by comparison with numerical simulation results provided by the k · p technique. With this model we examine the problem of the non-linear output characteristics of tunnel FETs, and the related small drain conductance at low drain voltage, which prevents rail-to-rail logic switching, and design a nanowire TFET by an appropriate selection of the material, nanowire size and degeneracy levels in the source and drain regions.