A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

摘要

We proposed models of subthreshold characteristics for deep nanoscale short channel asymmetric junctionless Double-Gate (DC) MOSFETs. Models were derived by solving 2-D Poisson's equation using variable separation technique. The subthreshold behavior with structure asymmetry such as different gate oxide thicknesses and different gate biases between the front-gate and back-gate can be exactly described. Design parameters such as body doping, body thickness and channel length were considered. The models were verified by comparing with device simulations' results.