机译:NMOS选择的相变存储芯片中的高速非对称T形单元
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China,School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan Nation Laboratory Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China,School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
high speed phase change memory; cell structure; super-lattice material; periphery circuit; testing;
机译:用于高速存储应用的相变存储单元的纳米尺度
机译:在64 Mbit相变存储芯片中加速读取操作的方法
机译:256 Mcell相变存储芯片,每单元$ 2 {+} $位
机译:在单个芯片上实现ROM和RAM功能的相变存储单元的集成,以实现片上系统(SOC)应用
机译:具有芯片多处理器和相变存储器的嵌入式系统的能源感知优化。
机译:dium掺杂为相变随机存取存储器应用带来了Sb2Te合金速度的改善
机译:校正:在128 MB相变存储芯片中实现的12状态多级单元存储