Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors

摘要

This work presents an evaluation of the Low-Frequency Noise (LFN) exhibited by short-channel Junction-less Nanowire Transistors (JNTs). Unlike in previous works in which only the noise of n-type transistors was evaluated, this paper exhibits an analysis of both the LFN and the effective trap density of n- and p-type JNTs. The low-frequency noise is analyzed in terms of the channel length as well as doping concentration and has shown to be nearly independent on the former parameter when the device is biased above threshold and to decrease with the raise of the latter. Also, carrier number fluctuations dominate the LFN in nMOS JNTs whereas an important mobility fluctuation component is present in the pMOS ones. The effective trap density of JNTs has shown to be in the order of 10~(19)cm~(-3)eV~(-1) presenting its maximum around 1.4 nm away from the silicon/gate dielectric interface independently on the device type or doping concentration.