...
机译:质子辐照4H-SiC肖特基二极管的导通状态特性:用于设备仿真的模型参数的校准
Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic,ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg, Switzerland;
Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic;
Department of Microelectronics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, CZ-16627 Prague 6, Czech Republic;
ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, CH-5405 Baden, Switzerland;
Centro Nacional de Microelectronica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain;
Silicon carbide; Schottky diode; Device simulation; Calibration; Radiation defects;
机译:质子和电子照射对基于4HOTTKY屏障的4H-SIC结构的整流二极管电流 - 电压特性的影响
机译:高能质子辐照对Au / Ni / 4H-SiC肖特基势垒二极管电学特性的影响
机译:重质子和中子辐照对外延4H-SiC肖特基二极管的影响
机译:质子与电子照射对基于4HOTKS屏障的4H-SIC结构的整流二极管电流 - 电压特性的影响
机译:基于体氮化镓的电子设备:肖特基二极管,肖特基型紫外光电探测器和金属氧化物半导体电容器。
机译:直接辐射的片上砷化镓肖特基二极管和天线的射频到直流特性用于近距离通信系统
机译:高能电子辐照对肖特基势垒高度和Ni / 4H-siC肖特基二极管的Richardson常数的影响