机译:使用两用薄Al_2O_3薄层进行表面保护和栅极绝缘体的AlGaN / GaN MISHFET的性能
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
Department of Electronic Engineering, Uiduk University, Gyeongju 780-713, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea;
Gallium nitride; HFET; Thin Al_2O_3 layer; ALD; Sheet resistance;
机译:以原子层沉积的Al_2O_3为栅绝缘体的AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管的二维电子输运特性的改善
机译:以A1_2O_3薄膜为表面钝化层和栅极电介质的AlGaN / GaN MISHFET的结构和电学特性
机译:具有薄AlGaN阻挡层的AlGaN / GaN异质结构场效应晶体管的Al_2O_3绝缘栅结构
机译:栅极绝缘子工程技术对AlGaN / GaN MISHFET的电子传输的影响:性能优化和非线性器件建模的仿真研究
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:栅漏电流在AlGaN / GaN肖特基栅HFET和MISHFET中引起的陷阱
机译:研究“高k”材料作为AlGaN / GaN基金属-绝缘体-半导体异质结构场效应晶体管(MISHFET)的替代电介质
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制