On the simulation and analytical modeling of on-state DC characteristicsn of Silicon Carbide Double-implanted MOSFETs

摘要

The high concentration of interface traps in SiC Double-implanted (D) MOSFETs makes the threshold voltage imprecise, and kills the surface mobility which raises the channel and accumulation layer resistances. Using a detailed comparison with numerical simulations, we examine the extent to which the above factors make analytical on-resistance models, which have proved useful for designing Si DMOSFETs, inaccurate for SiC DMOSFET design. Practical devices are 3-D; however, 3-D simulation is time an