A bottom-gate silicon nanowire field-effect transistor withn functionalized palladium nanoparticles for hydrogen gas sensors

摘要

The highly sensitive operation of a bottom-gate silicon nanowire (SiNW) field-effect transistor (FET)-based hydrogen (H-2) sensor is demonstrated by controlling the working regime of the sensor. It is observed that the deposition of palladium (Pd) nanoparticles on the SiNW surface for the selective absorption of H-2 can result in a significant enhancement of the electrostatic properties, such as the subthreshold swing and on-current, of the SiNW FET-based H-2 sensor. By comparing the experimenta