A comparative study of lateral SiCN/porous silicon and verticaln SiCN/porous silicon junctions for sensing ultraviolet light

摘要

In this paper, we report the comparative study of both lateral n-SiCN/p-porous silicon (PS) and vertical n-SiCN/p-porous silicon (PS) heterojunctions for low cost and high temperature ultraviolet (UV) detecting applications. The cubic crystalline n-SiCN films were deposited on p-(100) PS substrate with rapid thermal chemical vapor deposition (RTCVD). Owing to the PS layer features high resistivity and the flexibility, thus suppress the dark current to obtain a high photocurrent/dark current rati