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Effects of doping concentration ratio on electrical characterization inn pseudomorphic HEMT-based MMIC switches for ICT system

机译:掺杂浓度比对基于ICT伪HEMT的MMIC开关电特性的影响

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摘要

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhan
机译:研究了上下硅平面掺杂层之间的掺杂浓度比对双平面掺杂的伪高电子迁移率晶体管(pHEMTs)的DC和RF特性的影响。从器件仿真中,可以观察到最大非本征跨导的增加以及总通态和截止态电容的减小,以及上,下平面掺杂浓度比(UTLPDR)的增加,这导致了恩汉

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