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机译:低导通电压双金属AlGaN / GaN肖特基势垒二极管
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC;
Richtek Technology Corporation, Hsinchu 302, Taiwan, ROC;
Richtek Technology Corporation, Hsinchu 302, Taiwan, ROC;
Richtek Technology Corporation, Hsinchu 302, Taiwan, ROC;
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 106, Taiwan, ROC;
Electrical Engineering, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, USA;
AlGaN/GaN; Schottky barrier diode; High voltage; Si substrate;
机译:具有部分P-AlGaN帽层的新型AlGaN / GaN肖特基势垒二极管和用于高击穿和低开启电压的凹陷双金属阳极
机译:AlGaN / GaN肖特基势垒二极管与双阳极金属和P-GaN层相结合的效果在反向击穿和开启电压下
机译:一种新颖的AIGaN / GaN肖特基势垒二极管,具有部分p-AIGaN覆盖层和凹陷的双金属阳极,可实现高击穿和低导通电压
机译:无凹槽的AlGaN / GaN横向肖特基势垒控制肖特基整流器,具有低导通电压和高反向阻断
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:双异质结硅衬底上AlGaN / GaN肖特基势垒二极管的理论和实验研究
机译:无金AlGaN / GaN肖特基势垒二极管上的恒定电压关态应力研究
机译:低阻隔肖特基二极管电流关系的研究