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机译:电阻随机存取存储器(ReRAM)中化学浸泡法在Cu:SiO_2中的开关特性
Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan;
Department of Electronic Engineering, National United University, Miaoli 36003, Taiwan;
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan;
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan;
Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan;
Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan;
Chemical soaking (CS); Cu:SiO_2; Various Cu concentrations; Resistive random access memory (ReRAM);
机译:氧化铜相含量及其对电脉冲感应的Cu_xO电阻随机存取存储器的电阻开关特性的影响
机译:使用三氧化钼(MOO3)作为开关层的电阻随机存取存储器(RERAM)器件的制造与表征
机译:镝和抑制金属缓冲层对基于Cu-Sn合金导电桥随机存取存储器的电阻切换特性的影响
机译:紫外线对NIO电阻随机存取存储器(RERAM)器件的开关特性的影响
机译:电阻切换随机存取存储器(RRAM):对实际应用的分析,建模和表征
机译:单根Cu:7788-四氰基对二甲烷纳米线中的持续电阻切换:用于电阻随机存取存储器的有前途的材料
机译:HFO2 / TiOx双层电阻随机存取存储器中的低功率电阻切换特性
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。