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On the effect of technology scaling on variation-resilient sub-threshold circuits

机译:关于技术扩展对弹性变化的亚阈值电路的影响

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This paper studies the impact that CMOS technology scaling has on circuits operating in the ultra-low-voltage region. Sub-threshold circuits are an attractive option for energy-constrained applications, but the influence of scaling on the energy consumption has not been studied thoroughly on on-chip ultra-low-voltage implementations. This paper aims to provide an answer to the benefits and disadvantages of scaling on such implementations. First, an equation to determine the minimum feasible supply voltage for digital circuits is derived. Out of this equation, a theoretical minimum as well as a practical minimum supply for a specific technology can be calculated. Second, a 16-bit Multiply-Accumulate Unit is selected as a test vehicle to study scaling effects. This test vehicle is designed, processed and fully measured in both a 90 nm and a 40 nm CMOS technology. An extensive comparison between the measurement results of both designs allows to clearly examine the different technology scaling trade-offs.
机译:本文研究了CMOS技术缩放对超低压区域中运行的电路的影响。对于能量受限的应用,亚阈值电路是一个有吸引力的选择,但是在片上超低电压实施中,尚未对扩展对能量消耗的影响进行彻底研究。本文旨在为扩展此类实现的优缺点提供答案。首先,导出确定数字电路的最小可行电源电压的方程式。从这个方程式中,可以计算出特定技术的理论最小值和实际最小值。其次,选择16位乘法累加单元作为测试缩放比例的测试工具。该测试车采用90 nm和40 nm CMOS技术进行设计,处理和全面测量。两种设计的测量结果之间进行了广泛的比较,从而可以清楚地检查不同技术的权衡取舍。

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