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机译:关于商用LED蓝宝石晶片上的GaN垂直MESFET的设计
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA|Mansoura Univ, Fac Sci, Dept Phys, POB 35516, Mansoura, Egypt;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA|Taibah Univ, Fac Engn, Dept Elect Engn, Madinah, Saudi Arabia;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA;
Penn State Univ, Dept Engn Sci & Mech, Photon & Optoelect Devices Grp, University Pk, PA 16802 USA;
Vertical MESFETs; Schottky barrier lowering; Commercial LED wafers; Charge transport model; LT GaN buffer layer;
机译:垂直氮化镓基LED,其表面具有自然纹理化的表面,该表面由带有自组装银纳米点作为蚀刻掩模的图案化蓝宝石衬底形成
机译:金属有机化学气相沉积法在晶圆键合的蓝宝石上的多晶A1N衬底上实现InGaN / GaN多量子阱和LED生长
机译:通过直接晶圆键合制造的具有GaN /蓝宝石透明基板的倒装芯片AlGaInP LED
机译:AU-AU wafer bonding in vertical-structure Gan LED fabrication
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:凹图案蓝宝石衬底上生长的GaN基LED的晶体质量和光输出功率
机译:在c-蓝宝石衬底上生长GaN六角形棱柱形纳米结构的晶圆级选择性区域生长