机译:金属化后退火对65 nm NOR浮栅闪存可靠性的影响研究
Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China|Semicond Mfg Int Shanghai Corp, Shanghai 201203, Peoples R China;
Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Jiangsu, Peoples R China;
Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China;
Post-metallization annealing; Erasing performance degradation; Water diffusion model; Water-related traps;
机译:用于65nm NOR浮栅闪存的高级隧道氧化物层工艺
机译:基于低频噪声分析的65nm NOR Flash存储器P / E循环对漏极扰动的影响
机译:随机电报信号对65 nm多级NOR闪存阈值电压变化的影响
机译:钝化膜沉积和后退火对闪存可靠性的影响
机译:硅量子点浮栅闪存设备的计算机建模。
机译:SONOS闪存中氮化物内电荷迁移抑制的研究
机译:65 nm技术中的1G-Cell浮栅和闪存,具有100ns随机接入时间
机译:在某些EpROm,EEpROm,闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395