Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)

摘要

In this paper we engineer a TiNAl2O3(Hf,Al)O-2Ta2O5Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40 nm x 40 nm cell switches at 10 mu A using write pulses shorter than 100 ns (resp. 1 mu s) for Reset (resp. Set) and with amplitude <2 V. Using these conditions in a specially developed verify algorithm, a resistive window of 10x is reliably obtained, decreasing the write speed by more than 1 decade compared to state-of-the-art OxRRAM stacks at same current level. (C) 2016 Elsevier Ltd. All rights reserved.