New Y-function based MOSFET parameter extraction method from weak to strong inversion range

摘要

A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Y-c(=Q(i)root C-gc)-function and Y(=I-d/root g(m))-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail. (C) 2016 Elsevier Ltd. All rights reserved.