机译:对凹入式e-SiGe源极/漏极进行工艺优化,以增强22 nm全高k /金属栅pMOSFET的性能
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
KTH Royal Inst Technol, Dept Integrated Devices & Circuits, Isafjordsgatan 22-26, S-16440 Kista, Sweden;
Mosfet; SiGe; Source/drain recess; Epitaxy; Source/drain extension implant; 22 nm node;
机译:凹陷的沟道和/或掩埋的源极/漏极结构,用于提高具有高k栅极电介质的肖特基势垒源极/漏极晶体管的性能
机译:在源极/漏极中选择性生长的SiGe层的图案依赖性对22 nm节点pMOSFET的性能的影响
机译:嵌入式SiGe源/漏的28nm高k pMOSFET的低频噪声特性研究
机译:50nm以下DRAM中使用e-SiGe源极和漏极增强外围PMOSFET的迁移率
机译:用于亚22纳米节点数字CMOS逻辑技术的基于锗的量子阱沟道MOSFET的工艺集成和性能评估
机译:栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
机译:具有3-D Tri-Gate和高k /金属栅极的22nm SoC平台技术,针对超低功耗,高性能和高密度SoC应用进行了优化