Power detectors for integrated microwave/mm-wave imaging systems in mainstream silicon technologies

摘要

This paper analyzes and compares three different types of detectors, including CMOS power detectors, bipolar power detectors, and super-regenerative detectors, deployed in the literature for integrated microwave/mm-wave imaging systems in mainstream silicon technologies. Each detector has unique working mechanism and demonstrates different behavior with respects to bias conditions, input signal power, as well as bandwidth responses. Two Figure-of-Merits for both wideband and narrowband imaging have been defined to quantify the detector performance comparison. CMOS and Bipolar detectors are good for passive imaging, while super regenerative detectors are superior for active imaging. The analytical results have been verified by both simulation and measurement results. These analyses intend to provide design insights and guidance for integrated microwave/ mm-wave imaging power detectors. (C) 2016 Elsevier Ltd. All rights reserved.