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Enhanced tunability of electrical and magnetic properties in (La, Sr)MnO3 thin films via field-assisted oxygen vacancy modulation

机译:通过场辅助氧空位调制增强(La,Sr)MnO3薄膜的电和磁性能的可调性

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摘要

We investigated the tunability of the transport and magnetic properties in 7.5 nm La0.7Sr0.3MnO3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature T-C of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift T-C by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films. (C) 2017 Elsevier Ltd. All rights reserved.
机译:我们在铁电共聚物P(VDF-TrFE)作为栅绝缘体的场效应几何结构中研究了7.5 nm La0.7Sr0.3MnO3(LSMO)外延膜中输运和磁性的可调性。在施加高或低幅度的栅极电压时,观察到两种不同的开关行为。施加交替极性的振幅高到足以切换铁电共聚物剩余极化的单个电压脉冲会导致LSMO通道在300 K温度下的电阻发生15%的变化(但在20 K时变化小于1%) )。在电阻-温度图中观察到峰的最小位移,这意味着锰矿层的居里温度T-C没有变化。或者,发现施加一连串的低压脉冲会使T-C偏移超过16 K,并且获得了45%的沟道电阻变化。我们将此效应归因于LSMO层中的电场辅助注入和清除氧空位,这些空位可能会在整个氧化膜的厚度上发生。通过控制氧的迁移,低场转换路径提供了一种简单的方法来调节锰矿薄膜的电和磁性能。 (C)2017 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Solid-State Electronics》 |2017年第12期|56-61|共6页
  • 作者单位

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Univ Appl Sci Jena, Dept SciTec, Carl Zeiss Promenade 2, D-07743 Jena, Germany;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

    Univ Appl Sci Jena, Dept SciTec, Carl Zeiss Promenade 2, D-07743 Jena, Germany;

    Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    LSMO; Voltage control magnetism; Ferroelectric; Pulse chains;

    机译:LSMO;电压控制磁力;铁电;脉冲链;

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