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Monolithic integration of GMR sensors for standard CMOS-IC current sensing

机译:用于标准CMOS-IC电流感测的GMR传感器的单片集成

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摘要

In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 mu m CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 mu A. (C) 2017 Elsevier Ltd. All rights reserved.
机译:在这项工作中,我们报告了用于标准集成电路中离线电流测量的巨磁阻(GMR)传感器的开发。 ASIC是通过众所周知的AMS-0.35μmCMOS技术专门设计和制造的,包括用于传感器接口的电子电路。它实现了执行电压到频率转换的振荡电路。随后,已采用完全兼容CMOS的低温后处理工艺,以将全桥配置的GMR传感器件沉积到埋入的电流带上。已对这些传感器的灵敏度和分辨率进行了研究,获得的实验结果表明,检测灵敏度约为100 Hz / mA,分辨率约为5μA。(C)2017 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Solid-State Electronics》 |2017年第9期|100-104|共5页
  • 作者单位

    Univ Aquila, Dept Ind & Informat Engn & Econ, Laquila, Italy;

    Univ Valencia, Dept Elect Engn, Valencia, Spain;

    Univ Valencia, Dept Elect Engn, Valencia, Spain;

    Univ Politecn Cataluna, Dept Elect Engn, Barcelona, Spain;

    Univ Lisbon, INESC MN, Lisbon, Portugal|Univ Lisbon, Inst Super Tecn, Lisbon, Portugal;

    Univ Lisbon, INESC MN, Lisbon, Portugal|Univ Lisbon, Inst Super Tecn, Lisbon, Portugal;

    Univ Lisbon, INESC MN, Lisbon, Portugal|Univ Lisbon, Inst Super Tecn, Lisbon, Portugal;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GMR; CMOS ASIC; System-on-chip; Current sensing;

    机译:GMR;CMOS ASIC;片上系统;电流感应;

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