Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

摘要

The influence of the temperature on Metal Gate/Al2O3-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the detrapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects.