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机译:CMOS兼容的基于SiNx的电阻存储器的脉冲面积相关的渐变电阻切换特性
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Gachon Univ, Dept Elect Engn, Seongnam Si 13120, Gyeonggi Do, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Seoul Natl Univ, ISRC, Seoul 08826, South Korea|Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea;
Gradual resistance switching; RRAM; Pulse operation; Synaptic device;
机译:具有$ hbox {TiO} _ {2} hbox {-SiO} _ {2} $混合电阻开关材料的CMOS完全兼容嵌入式非易失性存储系统
机译:CMOS兼容的纳米级非易失性电阻,开关存储器
机译:脉冲激光沉积生长的类金刚石碳膜中的电阻转换行为,用于电阻转换随机存取存储器应用
机译:CMOS兼容的Ti / HfOx / W存储器具有良好的存储性能以及双极性和单极性电阻开关的共存
机译:与CMOS技术兼容的RF MEMS开关
机译:使用纳米级(1.3 nm)核-壳IrOx纳米点的依赖于形成极性的改进的电阻开关存储特性
机译:基于SiN的电阻式随机存取存储器中与功率和低电阻状态相关的双极性复位开关转换
机译:用于互补金属氧化物半导体(CmOs)兼容光开关的硅纳米晶光电克尔效应