Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

摘要

A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in electrical properties (high electrostatic control, low defect level, multi-Vt platform). Furthermore, the versatility and reliability of this technology is evidenced with a CMOS inverter, providing bright perspectives for ultimate scaling. (C) 2017 Elsevier Ltd. All rights reserved.