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机译:部分耗尽的SOI中与栅极NMOSFET相连的主体的陡峭亚阈值斜率特性
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Shanghai Huahong Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Diode; Floating body effect; Parasitic bipolar transistor; Partially depleted SOI; Subthreshold slope;
机译:热载流子应力对部分耗尽SOI nMOSFET的薄栅氧化物的栅极感应浮体效应和漏极电流瞬变的影响
机译:在部分耗尽的SOI nMOSFET薄栅极氧化物浮体中热载流子引起的漏极电流滞后和瞬变的退化
机译:使用基于电压的等效电路模型优化MOS门控可控硅,以设计陡峭亚阈值PN体并列绝缘体上硅FET
机译:超陡亚阈值斜率PN体约束SOI-FET的栅极控制二极管特性,可实现高效RF能量收集
机译:纳米栅极长度部分耗尽硅-NON-insulator CMOS器件和电路中浮体效应的分析,建模和控制
机译:正非线性电容:铁电FET中陡峭的亚阈值斜率的起因
机译:完全耗尽的源极/漏极UTB SOI MOSFET亚阈值特性的建模和仿真,包括衬底引起的表面电势效应