机译:量子限制对缩放比例极限下硅纳米线晶体管的输运和静电驱动性能的影响
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland|Al Mustansiriyah Univ, Baghdad, Iraq;
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland;
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland;
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland|Peking Univ, Inst Microelect, Beijing 100876, Peoples R China;
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland;
Synopsys, 11 Somerset Pl, Glasgow G3 7JT, Lanark, Scotland;
Synopsys, 11 Somerset Pl, Glasgow G3 7JT, Lanark, Scotland;
Synopsys, 11 Somerset Pl, Glasgow G3 7JT, Lanark, Scotland;
Synopsys, 11 Somerset Pl, Glasgow G3 7JT, Lanark, Scotland;
Univ Glasgow, Sch Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland|Synopsys, 11 Somerset Pl, Glasgow G3 7JT, Lanark, Scotland;
CMOS; Electrostatics; Nanowire transistors; Performance; Quantum effects; TCAD;
机译:量子约束对n型纳米线晶体管静电驱动性能影响的仿真研究
机译:长度缩放的硅纳米线中的单电子和量子限制极限
机译:基于伪电位的电子量子传输:理论公式及其在纳米级硅纳米线晶体管中的应用
机译:量子限制效应和装置静电驱动性能在超缩放的Si_xGe_(1-X)纳米线晶体管中的影响
机译:在低于5 nm的硅纳米线光刻中的量子限制效应和si纳米栅FET生物传感器的集成。
机译:硅纳米线FET晶体管中的量子传输:热电子和局部功耗
机译:量子限制对传输的影响以及硅纳米线晶体管在缩放极限下的静电驱动性能