机译:AlGaN / GaN纳米通道oFinFET的性能增强
Kyungpook Natl Univ, Inst Semicond Fus Technol, Daegu, South Korea;
Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea;
Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea;
Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea;
Samsung Elect Co Ltd, Syst LSI, Discrete Dev Team, Giheung, South Korea;
Minatec, Grenoble Inst Technol, IMEP LAHC, BP 257, F-38016 Grenoble 1, France;
Kyungpook Natl Univ, Sch Elect Engn, Daegu, South Korea;
AlGaN/GaN; Nanochannel; Omega-gate; FinFET; 2DEG; Breakdown voltage; Subthreshold slope;
机译:AlGaN / GaN纳米线Omega-FinFET中的1 / f噪声
机译:AlGaN / GaN多纳沟道高电子迁移率晶体管中沟道电场的增强
机译:纳米通道阵列(NCA)AlGaN / GaN HEMT的增强模式操作
机译:新型AlGaN / GaNΩ-FinFET具有出色的器件性能
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:薄Algan屏障PT-AlGaN / GaN HEMT气体传感器的响应增强在高温下源连接栅极配置
机译:门嵌入式AlGaN / GaN Fin-Nanichannel阵列MoShemts中的缩放效果