Single frequency correction based on three-element model for thin dielectric MOS capacitor

摘要

For super thin dielectric MOS capacitor, capacitance extraction by using two-element model is erroneous. Three-element model, considering parasitic parameters of parallel resistance R-p and series resistance R-s, is necessary. In this paper, we develop a single frequency correction method by combining capacitance-voltage (C-V) and current-voltage (I-V) data. By equating impedances of three-element model with that of two-element model, we obtain two characteristic equations. By using a differential resistance dV/dI, we obtain the third equation. Consequently, three real parameters for the capacitance C-m the R-p and the R-s are solved. As an application example of Al/HfO2-Si MOS, we demonstrate physically reasonable values for all three real parameters. Furthermore, dielectric loss tangent tan delta is calculated as 0.0050.022 at 1.5 V. A simplified expression of measured capacitance C-m about the C, the Rp, the Rs and angular frequency omega has been deduced. A constraint condition for large ratio C-m/C suggests the reduction of the ratio R-s/R-p and R-s. Considering suitable values for tan delta and ratio of C-m/C, applicable frequency range is from 15 kHz to 1.12.1 MHz. (C) 2016 Elsevier Ltd. All rights reserved.