Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect

摘要

This paper presents three methods to experimentally extract the thermal resistance of bipolar transistors taking into account the Early effect. The approaches are improved variants of recently-proposed techniques relying on common-base DC measurements. The accuracy is numerically verified by making use of a compact model calibrated on I-V characteristics of state-of-the-art SOG BJTs and SiGe:C HBTs. (C) 2016 Elsevier Ltd. All rights reserved.